BLF6G10-45 NXP Semiconductors, BLF6G10-45 Datasheet - Page 8

• Manufacturer Part Number: BLF6G10-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10-45,112

NXP Semiconductors
9. Package outline
Fig 8.
BLF6G10-45_2
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT608A
OUTLINE
VERSION
SOT608A
0.182
0.148
4.62
3.76
A
H
0.285
0.275
7.24
6.99
b
U
A
A
2
0.006
0.004
0.15
0.10
c
IEC
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D
1
10.21
10.01
0.402
0.394
JEDEC
E
U
D
D
q
b
1
1
10.29
10.03
0.405
0.395
REFERENCES
E
Rev. 02 — 20 January 2010
1
1
2
3
0
0.045
0.035
1.14
0.89
F
w
15.75
14.73
0.620
0.580
EIAJ
2
H
scale
5
C
C
0.130
0.115
3.30
2.92
p
F
B
p
10 mm
0.067
0.057
1.70
1.45
Q
w
1
15.24
0.600
q
A
20.45
20.19
0.805
0.795
U
B
1
PROJECTION
EUROPEAN
0.390
0.380
9.91
9.65
U
2
E
Power LDMOS transistor
BLF6G10-45
1
0.010 0.020
0.25
w
1
c
Q
0.51
w
© NXP B.V. 2010. All rights reserved.
2
ISSUE DATE
02-02-11
09-08-26
E
SOT608A
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