BLF6G10-45 NXP Semiconductors, BLF6G10-45 Datasheet - Page 7

RF MOSFET Small Signal LDMOS TNS

BLF6G10-45

Manufacturer Part Number
BLF6G10-45
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10-45

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, 13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G10-45,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G10-45
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF6G10-45
Manufacturer:
NXP
Quantity:
1 400
NXP Semiconductors
Table 8.
All capacitors should be soldered vertically.
[1]
[2]
BLF6G10-45_2
Product data sheet
Component
C1
C2
C3
C4
C5
C6
C7
C8, C11, C14
C9, C10, C12, C13
C15
C16
F1
Q3
R1
R2
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA
List of components (see
Table 8
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
Ferrite SMD bead
BLF6G10-45
SMD resistor
SMD resistor
C1
C8
Figure 6
C2 C3
C9
C10
and
R1
Rev. 02 — 20 January 2010
C11
C4
Figure
7).
330 nF; 50 V
Value
3.0 pF
1 pF
6.2 pF
2 pF
1.0 pF
6.8 pF
6.8 pF
68 pF
4.5 μF; 50 V
220 μF
-
-
4.7 Ω; 0.1 W
6.8 Ω; 0.1 W
C12 C13
C5
C14
C6
F1
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
[2]
C15
Remarks
Ferroxcube BDS 3/3/8.9-4S2 or equivalent
R2
+
C16
C7
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
BLF6G10-45
001aah533
© NXP B.V. 2010. All rights reserved.
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