BLF6G10-45 NXP Semiconductors, BLF6G10-45 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10-45,112

NXP Semiconductors
BLF6G10-45_2
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
25
23
21
19
17
15
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
DS
= 960.1 MHz.
= 28 V; I
= 28 V; I
20
Dq
Dq
= 350 mA; f = 960 MHz.
= 350 mA; f
40
1
= 960 MHz;
(dB)
G
p
25
23
21
19
17
15
60
0
P
L (PEP)
001aah528
η
G
D
(W)
p
10
Rev. 02 — 20 January 2010
80
70
55
40
25
10
−5
(%)
η
D
20
Fig 3.
30
(dBc)
IMD
−30
−60
−90
0
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
40
2
DS
001aah527
= 960.1 MHz.
P
L
= 28 V; I
(W)
η
G
D
p
50
75
60
45
30
15
0
Dq
(%)
η
20
D
= 350 mA; f
Power LDMOS transistor
BLF6G10-45
1
= 960 MHz;
40
P
L(PEP)
© NXP B.V. 2010. All rights reserved.
001aah529
IMD3
IMD5
IMD7
(W)
60
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