BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 8

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G10S-45_3
Product data sheet
Document ID
BLF6G10S-45_3
Modifications:
BLF6G10S-45_2
BLF6G10S-45_1
Revision history
Release date
20100120
20090210
20070223
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
•
•
•
•
Section 1.1 “General description”
Section 1.2 “Features”
Section 1.3 “Applications”
Section 12 “Legal information”
Abbreviations
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Rev. 03 — 20 January 2010
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Waveform
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface-Mount Device
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
lower frequency range extended to 700 MHz from 800 MHz.
lower frequency range extended to 700 MHz from 800 MHz.
export control disclaimer added.
lower frequency range extended to 700 MHz from 800 MHz.
Change notice
-
-
-
BLF6G10S-45
Power LDMOS transistor
Supersedes
-
BLF6G10S-45_2
BLF6G10S-45_1
© NXP B.V. 2010. All rights reserved.
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