BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 2

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G10S-45_3
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G10S-45
Symbol
V
V
I
T
Symbol
R
T
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
700 MHz to 1000 MHz frequency range.
Connected to flange.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from junction
to case
drain
gate
source
Description
Package
Name
-
Rev. 03 — 20 January 2010
Description
ceramic earless flanged package; 2 leads
Conditions
Conditions
T
P
case
L
[1]
= 12.5 W
Simplified outline
= 80 °C;
1
2
BLF6G10S-45
3
Power LDMOS transistor
Symbol
Typ
1.7
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
Max
65
+13
13
+150
225
sym112
Version
SOT608B
Unit
K/W
1
3
2 of 10
Unit
V
V
A
°C
°C