BLF6G10S-45 NXP Semiconductors, BLF6G10S-45 Datasheet - Page 7

• Manufacturer Part Number: BLF6G10S-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10S-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 23@28VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10S-45,112

NXP Semiconductors
9. Package outline
Fig 8.
BLF6G10S-45_3
Product data sheet
Ceramic earless flanged package; 2 leads
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
inch
mm
VERSION
OUTLINE
SOT608B
Package outline SOT608B
0.182
0.148
4.62
3.76
A
0.285
0.275
7.24
6.99
b
0.006
0.004
0.15
0.10
c
IEC
A
H
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D
1
10.21
10.01
0.402
0.394
JEDEC
E
U
D
b
1
D
1
10.29
10.03
0.405
0.395
REFERENCES
E
1
3
1
2
Rev. 03 — 20 January 2010
0.045
0.035
1.14
0.89
F
0
w
15.75
14.73
0.620
0.580
1
JEITA
F
H
A
scale
A
0.067
0.057
1.70
1.45
Q
5 mm
10.24
0.403
0.393
9.98
U
1
U
10.24
0.403
0.393
2
9.98
U
2
E
1
0.020
0.51
w
1
Q
PROJECTION
EUROPEAN
c
BLF6G10S-45
Power LDMOS transistor
E
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
06-12-06
09-08-26
SOT608B
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