BFG310W/XR T/R NXP Semiconductors, BFG310W/XR T/R Datasheet - Page 8

• Manufacturer Part Number: BFG310W/XR T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.01 A
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG310W/XR,115

Philips Semiconductors
9397 750 14245
Product data sheet
Table 9:
Designation
C
C
C
C_base_pad
C_emitter_pad
L
L
L
L
L
L
Fig 9. Package equivalent circuit of SOT343R
C_wire
B_wire
E_wire
C_lead
B_lead
E_lead
CB
BE
CE
List of components; see
L
B_lead
Rev. 01 — 2 February 2005
C
C
CB
BE
L
B_wire
CHIP
Value
2
80
80
67
142
0.767
0.842
0.212
0.28
0.281
0.1
Figure 9
C_base_pad
BJT1
L
L
L
L
C_lead
C_wire
E_wire
E_lead
NPN 14 GHz wideband transistor
Unit
fF
fF
fF
fF
fF
nH
nH
nH
nH
nH
nH
C_emitter_pad
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BFG310W/XR
001aac166
C
CE
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