bfg310 NXP Semiconductors, bfg310 Datasheet

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bfg310

Manufacturer Part Number
bfg310
Description
Npn 14 Ghz Wideband Transistor
Manufacturer
NXP Semiconductors
Datasheet

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BFG310
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bfg310W
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Part Number:
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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
Table 1:
Symbol Parameter
V
V
I
P
h
C
f
C
T
FE
CBO
CEO
tot
CBS
BFG310/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
repeater amplifiers in fiber-optic systems
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
Quick reference data
Conditions
open emitter
open base
T
I
T
V
emitter grounded
I
f = 1 GHz; T
C
C
sp
j
CB
= 25 C
= 5 mA; V
= 5 mA; V
= 5 V; f = 1 MHz;
145 C
amb
CE
CE
= 3 V;
= 3 V;
= 25 C
Product data sheet
[1]
Min
-
-
-
-
60
-
-
Typ
-
-
-
-
100
0.17
14
Max
15
6
10
60
200
0.3
-
Unit
V
V
mA
mW
pF
GHz

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