BFG310W/XR T/R NXP Semiconductors, BFG310W/XR T/R Datasheet - Page 5

• Manufacturer Part Number: BFG310W/XR T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.01 A
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG310W/XR,115

Philips Semiconductors
9397 750 14245
Product data sheet
Fig 5. Common emitter input reflection coefficient (s
Fig 6. Common emitter forward transmission coefficient (s
V
V
CE
CE
= 3 V; I
= 3 V; I
180
180
C
C
= 5 mA; Z
= 5 mA.
20
0
Rev. 01 — 2 February 2005
135
135
135
135
0.2
0.2
16
o
40 MHz
0.2
= 50 .
12
3 GHz
0.5
0.5
8
0.5
4
90
90
90
90
1
0
1
1
3 GHz
2
11
NPN 14 GHz wideband transistor
); typical values
40 MHz
2
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
21
5
BFG310W/XR
); typical values
45
45
45
45
10
001aac181
001aac182
5
5
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
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