NE68839-A NEC, NE68839-A Datasheet

NE68839-A

Manufacturer Part Number

NE68839-A

Description

RF Bipolar Small Signal NPN High Frequency

Manufacturer

NEC

Datasheet

1.NE68819-T1-A.pdf (20 pages)

Specifications of NE68839-A

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.1 A

Power Dissipation

0.2 W

Package / Case

SOT-143

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS

FEATURES

NEC's NE688 series of NPN epitaxial silicon transistors are

designed for low cost amplifier and oscillator applications. Low

noise figures, high gain and high current capability equate to

wide dynamic range and excellent linearity. NE688's low

phase noise distortion and high fT make it an excellent choice

for oscillator applications up to 5 GHz. The NE688 series is

available in six different low cost plastic surface mount pack-

age styles, and in chip form.

Notes:

1. Precaution: Devices are ESD sensitive. Use proper handling procedures.

2. Electronic Industrial Association of Japan.

DESCRIPTION

• LOW PHASE NOISE DISTORTION

• LOW NOISE: 1.5 dB at 2.0 GHz

• LOW VOLTAGE OPERATION

• LARGE ABSOLUTE MAXIMUM COLLECTOR

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

• ALSO AVAILABLE IN CHIP FORM

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

CURRENT: I

MOUNT PACKAGE STYLES

TH(J-A)

TH(J-C)

CBO

EBO

21E

RE 4

MIN

Gain Bandwidth Product at

Minimum Noise Figure at

Insertion Power Gain at

Forward Current Gain

Collector Cutoff Current

at V

Emitter Cutoff Current

at V

Feedback Capacitance at

Total Power Dissipation

Thermal Resistance

(Junction to Ambient)

Thermal Resistance(Junction to Case) °C/W

EIAJ

= 1V, I

= 3V, I

= 1 V, I

= 3 V, I

= 1V, I

= 3V, I

= 1 V, I

MAX = 100 mA

= 1 V, I

= 5 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

= 3 mA, f = 2.0 GHz

= 20 mA, f = 2.0 GHz

= 3 mA, f = 2.0 GHz

= 20 mA, f = 2.0 GHz

= 0 mA, f = 1 MHz

= 3 mA, f = 2.0 GHz

= 7 mA, f = 2.0 GHz

= 3 mA

= 0 mA

HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON

°C/W

GHz

= 25°C)

3.0 4.0

NE68818

2SC5194

0.65 0.8

1.7

1.5

8.5

160

100

150

833

2.5

4.5

3.0

3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.

4. The emitter terminal should be connected to the ground terminal of

the 3 terminal capacitance bridge.

NE68819

2SC5195

18 (SOT 343 STYLE)

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

9.5

1.7

1.5

4.0

0.7

1000

160

100

125

2.5

0.8

California Eastern Laboratories

2.5

NE68830

2SC5193

0.75 0.85

4.5

1.7

1.5

3.5

6.5

160

100

150

833

2.5

19 (3 PIN ULTRA SUPER

39R (SOT 143R STYLE)

33 (SOT 23 STYLE)

2.5

NE68833

2SC5191

NE688

SERIES

0.75 0.85

4.5

8.5

1.7

1.5

3.5

6.5

MINI MOLD)

160

100

200

625

2.5

NE68839/39R

2SC5192/92R

4.0

0.65 0.8

4.5

1.7

1.5

4.5

160

100

200

625

2.5

Related parts for NE68839-A

NE68839-A Summary of contents

Page 1

... Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE688 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) 33 (SOT 23 STYLE) 39R (SOT 143R STYLE) NE68830 NE68833 NE68839/39R 2SC5193 2SC5191 2SC5192/92R 4 ...

Page 2

... Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES NE68818, NE68830 D.C. POWER DERATING CURVE 200 100 100 Ambient Temperature T NE68833, NE68839 D.C. POWER DERATING CURVE 200 100 100 Ambient Temperature 25°C) A UNITS RATINGS ...

Page 3

... Base to Emitter Voltage, V (TA = 25° 100 (mA) 20 100 50 (mA) 1 (V) BE NE68833 NOISE FIGURE vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C NE68839 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C NE68830 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE MHz 1.0 0.5 0 Collector to Base Voltage, V (V) CB 100 ...

Page 4

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz 5 GHz . 1 0.1 GHz -.2 -.4 -2 -.6 -1.5 -.8 ...

Page 5

TYPICAL SCATTERING PARAMETERS NE68819 FREQUENCY S 11 GHz MAG ANG 0.1 0.538 -68.800 0.4 0.385 -146.900 0.8 0.358 -179.500 1.0 0.352 170.400 1.5 0.345 152.000 2.0 0.335 137.400 2.5 0.334 ...

Page 6

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz . GHz 1 0.1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68830 V = 0.5 ...

Page 7

TYPICAL SCATTERING PARAMETERS NE68830 FREQUENCY S 11 GHz MAG ANG 0.1 0.472 -66.200 0.4 0.313 -143.700 0.8 0.289 -171.000 1.0 0.285 -179.400 1.5 0.283 165.900 2.0 0.280 153.300 2.5 0.278 ...

Page 8

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -.8 -1 NE68833 0.5 mA ...

Page 9

TYPICAL SCATTERING PARAMETERS NE68833 FREQUENCY S 11 GHz MAG ANG 0.1 0.738 -38.900 0.4 0.422 -108.100 0.8 0.317 -152.000 1.0 0.304 -166.400 1.5 0.302 168.000 2.0 0.317 148.300 2.5 0.342 ...

Page 10

... NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz . GHz 1 0.1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68839 FREQUENCY S 11 GHz MAG ANG 0.1 0.989 -15.100 0.4 0.899 -58.000 0.8 0.768 -105.900 1.0 0.727 -125.800 1.5 0.694 -164.800 2.0 0.716 167.500 2.5 0.755 147.100 3 ...

Page 11

... TYPICAL SCATTERING PARAMETERS NE68839 FREQUENCY S 11 GHz MAG ANG 0.1 0.840 -29.900 0.4 0.574 -94.600 0.8 0.440 -144.900 1.0 0.425 - 162.500 1.5 0.443 167.400 2.0 0.489 147.700 2.5 0.534 133.000 3.0 0.575 122.900 4.0 0.660 106.200 5.0 0.728 92.400 0.1 ...

Page 12

NE688 SERIES NE68800 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF ...

Page 13

NE68818 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 14

NE688 SERIES NE68819 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 ...

Page 15

NE68830 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 16

NE68833 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 17

... NE68839 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR 3.5 ITF IKR 0.06 PTF ISC 3.5e- 1. 0.4 XTB RB 6.14 XTI RBM 3 ...

Page 18

... LEAD 3 ONLY LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector +0.1 0.15 -0.05 +0.1 0.3 -0.05 (ALL LEADS) LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector +0.10 0.15 -0.05 +0.10 0.4 -0.05 (ALL LEADS) +0.10 0.65 -0.15 LEAD CONNECTIONS 1. Emitter 2. Base 3 ...

Page 19

... NE68830-T1-A 3000 NE68833-T1-A 3000 NE68839-T1-A 3000 NE68839R-T1 3000 Note: 1. Lead material: Cu Lead plating: PbSn Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 20

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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