BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet - Page 7

• Manufacturer Part Number: BLF6G20LS-75
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-75

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-75,112

NXP Semiconductors
Table 8.
[1]
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
Component
C1
C2, C11
C3, C6, C9
C4, C8, C10
C5
C7
C12
C13
R1
Fig 10. Component layout for 1990 MHz test circuit
American Technical Ceramics type 100B or capacitor of same quality.
V
GG
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
See
List of components (see
TESTCIRCUIT
INPUTBOARD
Table 8
C1
Description
multilayer ceramic chip capacitor
gigahertz trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
Philips chip resistor
C7
for list of components.
TB
R1
C2
Figure 9
C3
C4
and
Rev. 02 — 9 February 2009
C5
C6
Figure
BLF6G20-75; BLF6G20LS-75
10)
Value
1 pF
0.6 pF to 4.5 pF
12 pF
10 F; 50 V
1.5 F; 50 V
10 F; 50 V
12 pF
220 F; 50 V
5.6 ; 1206
V
DD
C13
C8 C9
[1]
[1]
[1]
C10
TESTCIRCUIT
+
Remarks
Temex AT SM270 or equivalent
TDK C5750X7R1H106M or equivalent
TDK C3225X7R1H155M or equivalent
Kemet T491 series or equivalent
C11
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
OUTPUTBOARD
TB
© NXP B.V. 2009. All rights reserved.
001aah673
C12
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