BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet - Page 4

• Manufacturer Part Number: BLF6G20LS-75
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-75

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20LS-75,112

NXP Semiconductors
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
7.2 One-tone CW
7.3 Two-tone CW
Fig 1.
Fig 2.
V
One-tone CW power gain and drain efficiency as functions of load power;
typical values
V
Two-tone CW power gain and drain efficiency as functions of peak envelope load
power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
(dB)
(dB)
G
= 550 mA; f = 1990 MHz.
G
= 550 mA; f
Rev. 02 — 9 February 2009
p
p
21
20
19
18
17
16
15
14
21
20
19
18
17
16
15
14
0
0
BLF6G20-75; BLF6G20LS-75
G
G
1
D
D
p
p
= 1989.95 MHz; f
20
20
40
40
2
60
60
= 1990.05 MHz.
80
80
P
001aah674
001aah675
L(PEP)
P
L
(W)
(W)
100
100
Power LDMOS transistor
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
(%)
(%)
D
D
© NXP B.V. 2009. All rights reserved.
4 of 12