BFG198 T/R NXP Semiconductors, BFG198 T/R Datasheet - Page 8

• Manufacturer Part Number: BFG198 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG198 T/R

• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG198,115

NXP Semiconductors
1995 Sep 12
handbook, halfpage
NPN 8 GHz wideband transistor
(dB)
V
f
Fig.12 Second order intermodulation distortion as
d 2
(p+q)
CE
= 8 V; V
35
40
45
50
55
60
= 810 MHz.
20
a function of collector current.
o
= 50 dBmV; T
40
amb
60
= 25 C
80
100
I
C
MBB268
(mA)
120
8
Product specification
BFG198