BFG198 T/R NXP Semiconductors, BFG198 T/R Datasheet - Page 3

• Manufacturer Part Number: BFG198 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG198 T/R

• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG198,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. d
3. d
4. I
1995 Sep 12
R
I
h
C
C
C
f
G
V
d
SYMBOL
SYMBOL
j
CBO
T
FE
2
= 25 C unless otherwise specified.
o
NPN 8 GHz wideband transistor
th j-s
c
e
re
UM
V
V
V
measured at f
V
V
V
measured at f
f
C
(p+q)
s
im
im
p
q
r
p
q
r
UM
= 50 mA; V
= V
= V
is the temperature at the soldering point of the collector tab.
= V
= V
= V
= V
= 60 dB (DIN 45004B); I
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
= 810 MHz; f
o
o
o
o
o
o
6 dB; f
6 dB; f
at d
6 dB; f
at d
6 dB; f
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
output voltage
second order
intermodulation distortion
im
im
CE
(p+qr)
(p+qr)
= 60 dB;
= 60 dB; f
q
r
p
q
PARAMETER
= 805.25 MHz;
= 8 V; V
= 453.25 MHz; f
= 445.25 MHz;
= 803.25 MHz;
p
= 250 MHz; f
= 443.25 MHz.
= 793.25 MHz.
o
p
= 50 dBmV;
= 795.25 MHz;
PARAMETER
C
C
= 70 mA; V
= 70 mA; V
q
r
= 560 MHz.
= 455.25 MHz
I
I
I
I
I
I
T
I
T
I
T
note 2
note 3
note 4
E
C
E
C
C
C
C
C
amb
amb
amb
= 0; V
= i
= 50 mA; V
= i
= 0; V
= 50 mA; V
= 50 mA; V
= 50 mA; V
CE
CE
e
c
= 25 C
= 25 C
= 25 C
= 8 V; R
= 8 V; R
= 0; V
= 0; V
CB
CE
= 5 V
= 8 V; f = 1 MHz
CONDITIONS
CB
EB
CE
CE
CE
CE
L
L
= 0.5 V; f = 1 MHz
= 8 V; f = 1 MHz
3
= 75 ; T
= 75 ; T
12
= 5 V
= 8 V; f = 1 GHz;
= 8 V; f = 500 MHz;
= 8 V; f = 800 MHz;
is zero and
up to T
amb
amb
= 25 C;
= 25 C;
s
= 135 C (note 1)
G
CONDITIONS
UM
=

40









10
MIN.
log
-------------------------------------------------------- dB.

1

90
1.5
4
0.8
8
18
15
750
700
55
–
TYP.
s
11
Product specification
s
2
21
 1

100










VALU
2
MAX.
–
BFG198
40
E
s
22
2

nA
pF
pF
pF
GHz
dB
dB
mV
mV
dB
UNIT
UNIT
K/W