PTFB211503EL V1 R250 Infineon Technologies, PTFB211503EL V1 R250 Datasheet - Page 7

• Manufacturer Part Number: PTFB211503EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211503ELV1R25NT

Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit input schematic for ƒ = 2170 MHz
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet
DRAIN DUT
1000 pF
C803
(Pin D)
(Pin V)
(Pin V)
DUT
DUT
R801
1200 Ohm
1300 Ohm
R802
C802
1000 pF
TL203
TL213
TL214
1
B
TL209
8
4
2
3
In
NC
C
2
S
E
4
S1
3
RF_IN
Out
NC
6
S2
7
1
5
TL226
100 Ohm
TL223
2200000 pF
R804
10 Ohm
R803
C202
PTFB211503EL/FL_INPUT
TL202
C801
1000 pF
2200000 pF
C210
S3
TL104
TL228
TL221
R805
10 Ohm
3
1
TL206
TL113
PTFB211503EL/FL_OUTPUT
3
2
2
3
1
TL102
1000000 pF
C201
TL201
1000000 pF
TL114
TL118
TL138
TL119
TL115
TL137
TL116
TL136
TL140
TL107
TL117
C206
C107
8.2 pF
TL227
2
1
2
1
2
1
TL220
1
3
3
3
TL212
3
C103
TL127
4710000 pF
C104
4710000 pF
2
2
TL126
C208
TL128
0.5 pF
3
1
TL134 TL135
7 of 14
TL229
1
TL230
TL218
3
R104
10 Ohm
2
R101
10 Ohm
TL208
10000000 pF
C204
C106
2.2 pF
C105
0.6 pF
TL131
TL130
TL133
TL124
TL123
C205
10000000 pF
1
TL215
TL204
2
4
3
TL122
10 pF
TL139
1
C102
TL132
3
TL210
2
TL231
2
C101
10 pF
2
TL121
3
3
1
1
TL111
TL110
1
3
TL217
2
C207
8.2 pF
10000000 pF
TL101
C203
TL216
TL105
TL129
b 2 1 1 5 0 3 e f l _ b d i n _ 0 8 - 1 9 - 2 0 1 0
10000000
b 2 1 1 5 0 3 e f l _ b d o u t _ 0 8 - 1 9 - 2 0 1 0
C209
TL103
TL108
TL211
TL120
TL106
TL109
TL225
TL219
1
1
3
2
4
2
PTFB211503EL
PTFB211503FL
3
2
TL205
3
TL125
1
Rev. 04, 2011-03-07
TL222
TL224
TL207
TL112
GATE DUT
V
(Pin G)
DD
V
RF_OUT
DD