PTFB211503EL V1 R250 Infineon Technologies, PTFB211503EL V1 R250 Datasheet - Page 6

• Manufacturer Part Number: PTFB211503EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211503ELV1R25NT

Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
See next page for reference circuit information
Data Sheet
MHz
2200
2170
2140
2110
2080
Z Source
2.06
2.17
2.30
2.43
2.58
R
Z Source W
G
–6.08
–6.33
–6.59
–6.86
–7.14
D
S
jX
Z Load
2.19
2.19
2.20
2.21
2.22
R
Z Load W
6 of 14
–4.73
–4.82
–4.91
–5.00
–5.09
jX
2200 MHz
Z Load
PTFB211503EL
PTFB211503FL
Z Source
Rev. 04, 2011-03-07
2080 MHz
Z
0
= 50 W