PTFB211503EL V1 R250 Infineon Technologies, PTFB211503EL V1 R250 Datasheet - Page 14

• Manufacturer Part Number: PTFB211503EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211503ELV1R25NT

PTFB211503EL V1 / PTFB211503FL V2
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Data Sheet
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Subjects (major changes since last revision)
Updated features
Corrected typo
2011-03-07
2010-11-10, Data Sheet
14 of 14
Rev. 04, 2011-03-07
Data Sheet