CY14B256LA-ZS25XIT Cypress Semiconductor Corp, CY14B256LA-ZS25XIT Datasheet - Page 14

• Manufacturer Part Number: CY14B256LA-ZS25XIT
• Description: CY14B256LA-ZS25XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B256LA-ZS25XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 001-54707 Rev. *F
Software Controlled STORE/RECALL Cycle
Switching Waveforms
t
t
t
t
t
Notes
RC
SA
CW
HA
RECALL
27. The software sequence is clocked with CE controlled or OE controlled reads.
28. The six consecutive addresses must be read in the order listed in
29. DQ output data at the sixth read may be invalid since the output is disabled at t
Parameters
HSB (STORE only)
[27, 28]
DQ (DATA)
DQ (DATA)
Address
Address
CE
OE
RWI
STORE/RECALL initiation cycle time
Address setup time
Clock pulse width
Address hold time
RECALL duration
OE
CE
t
SA
t
Figure 10. CE and OE Controlled Software STORE/RECALL Cycle
SA
t
t
LZCE
LZCE
t
t
SA
SA
Address #1
Address #1
t
t
Figure 11. Autostore Enable / Disable Cycle
RC
t
CW
RC
Description
t
CW
t
HZCE
t
t
HA
HA
Table 2
t
HZCE
t
t
HA
HA
on page 6. WE must be HIGH during all six consecutive cycles.
DELAY
t
DELAY
time.
Address #6
Note
t
RC
t
29
CW
Min
25
20
t
Address #6
–
0
0
HA
Note
25 ns
High Impedance
t
RC
t
CW
29
t
STORE
t
HA
Max
200
t
t
HA
DELAY
–
–
–
–
/t
t
RECALL
SS
[28]
t
HA
Min
45
30
0
0
–
45 ns
CY14B256LA
Max
200
t
HHHD
–
–
–
–
Page 14 of 22
t
LZHSB
Unit
ns
ns
ns
ns
µs
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