CY14B256LA-ZS25XIT Cypress Semiconductor Corp, CY14B256LA-ZS25XIT Datasheet - Page 10

• Manufacturer Part Number: CY14B256LA-ZS25XIT
• Description: CY14B256LA-ZS25XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B256LA-ZS25XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention and Endurance
Capacitance
Thermal Resistance
AC Test Conditions
Input Pulse Levels .................................................. 0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <3 ns
Input and Output Timing Reference Levels ................... 1.5 V
Note
DATA
NV
C
C
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-54707 Rev. *F
IN
OUT
Parameter
C
Parameter
Parameter
R
OUTPUT
Θ
Θ
JC
JA
3.0 V
[10]
[10]
Input capacitance
Output capacitance
30 pF
Data retention
Nonvolatile STORE operations
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Description
Description
577 Ω
R1
789 Ω
Figure 4. AC Test Loads
T
V
Test conditions follow standard
test methods and procedures for
measuring thermal impedance, in
accordance with EIA/JESD51.
Description
A
R2
CC
= 25 °C, f = 1 MHz,
= V
CC
Test Conditions
(Typ)
OUTPUT
Test Conditions
3.0 V
5 pF
48-SSOP 44-TSOP II
37.47
24.71
577 Ω
R1
31.11
5.56
1,000
Min
Max
20
7
7
For tristate specs
CY14B256LA
789 Ω
32-SOIC
R2
41.55
24.43
Page 10 of 22
Years
Unit
Unit
pF
pF
K
°C/W
°C/W
Unit
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