CY14B256LA-ZS25XIT Cypress Semiconductor Corp, CY14B256LA-ZS25XIT Datasheet - Page 13

• Manufacturer Part Number: CY14B256LA-ZS25XIT
• Description: CY14B256LA-ZS25XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B256LA-ZS25XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AutoStore/Power-Up RECALL
Switching Waveforms
Document Number: 001-54707 Rev. *F
t
t
t
V
t
V
t
t
Notes
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
21. t
22. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
23. On a Hardware Store and AutoStore initiation, SRAM write operation continues to be enabled for time t
24. These parameters are guaranteed by design and are not tested.
25. Read and Write cycles are ignored during STORE, RECALL, and while V
26. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
SWITCH
HDIS
HRECALL
[24]
[24]
[24]
[23]
[22]
Parameters
[24]
[21]
starts from the time V
Read & Write
Inhibited
(RWI)
POWER-
AutoStore
RECALL
HSB OUT
V
UP
SWITCH
V
V
HDIS
CC
CC
POWER-UP
Power-up RECALL duration
STORE cycle duration
Time allowed to complete SRAM write cycle
Low voltage trigger level
V
HSB output disable voltage
HSB to output active time
HSB high active time
rises above V
RECALL
CC
Note
t
VCCRISE
rise time
26
SWITCH.
Figure 9. AutoStore or Power-Up RECALL
Read & Write
t
t
t
LZHSB
HRECALL
HHHD
Description
Note
AutoStore
t
BROWN
DELAY
22
CC
OUT
is below V
t
STORE
POWER-UP
RECALL
SWITCH.
t
DELAY
HRECALL
t
t
HHHD
LZHSB
Read & Write
[25]
.
t
DELAY
Min
150
CY14B256LA
–
–
–
–
–
–
–
Note
AutoStore
POWER
DOWN
22
CY14B256LA
Note
t
STORE
Max
2.65
500
1.9
20
25
–
8
5
26
Page 13 of 22
Unit
ms
ms
ns
µs
µs
ns
V
V
[+] Feedback