IXGA12N120A3 IXYS, IXGA12N120A3 Datasheet - Page 5

no-image

IXGA12N120A3

Manufacturer Part Number
IXGA12N120A3
Description
IGBT Transistors 1200V, 12A IGBT; G Series
Manufacturer
IXYS
Datasheet

Specifications of IXGA12N120A3

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
22
Ic90, Tc=90°c, Igbt, (a)
12
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Rthjc, Max, Igbt, (°c/w)
1.25
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2010 IXYS CORPORATION, All Rights Reserved
2200
2000
1800
1600
1400
1200
1000
240
220
200
180
160
140
120
100
260
240
220
200
180
160
140
800
600
25
0
6
T
R
V
t
T
V
J
CE
G
Fig. 14. Resistive Turn-on Switching Times
r
J
= 25ºC
CE
30
= 10Ω , V
35
Fig. 16. Resistive Turn-off Switching Times
= 125ºC, V
= 960V
8
= 960V
60
Fig. 12. Resistive Turn-on Rise Time
45
10
GE
GE
= 15V
t
d(on)
90
= 15V
vs. Gate Resistance
T
vs. Junction Temperature
vs. Collector Current
55
J
12
I
= 125ºC
- - - -
C
T
J
= 24A
120
- Degrees Centigrade
I
65
R
C
14
G
- Amperes
- Ohms
150
I
C
75
t
R
V
= 24A
16
f
CE
G
I
180
= 10Ω, V
= 960V
C
= 12A
85
18
210
t
GE
d(off
95
= 15V
)
20
240
- - - -
I
C
= 12A
105
270
22
115
300
24
140
120
100
80
60
40
20
110
100
90
80
70
60
50
40
30
125
1600
1500
1400
1300
1200
1100
1000
1800
1700
1600
1500
1400
1300
1200
1100
240
220
200
180
160
140
120
100
900
800
25
6
0
R
V
t
R
V
t
T
V
G
CE
f
Fig. 17. Resistive Turn-off Switching Times
G
CE
f
J
35
CE
30
= 10Ω , V
Fig. 15. Resistive Turn-off Switching Times
= 125ºC, V
= 10Ω, V
= 960V
8
= 960V
= 960V
IXGA12N120A3 IXGP12N120A3
60
45
Fig. 13. Resistive Turn-on Rise Time
I
GE
10
GE
C
t
d(off)
GE
= 12A
= 15V
vs. Junction Temperature
t
= 15V
d(off)
90
55
= 15V
vs. Gate Resistance
- - - -
- - - -
12
vs. Collector Current
T
J
I
120
C
65
- Degrees Centigrade
= 24A
R
G
14
I
150
- Ohms
C
75
I
- Amperes
C
T
= 12A
J
180
= 125ºC
16
85
T
J
IXGH12N120A3
210
= 25ºC
I
95
C
18
= 24A
240
105
20
IXYS REF: G_12N120A3(2M)02-11-10
270
115
22
300
125
700
600
500
400
300
200
100
0
100
90
80
70
60
50
40
30
20
24

Related parts for IXGA12N120A3