IXGA12N120A3 IXYS, IXGA12N120A3 Datasheet - Page 3

• Manufacturer Part Number: IXGA12N120A3
• Description: IGBT Transistors 1200V, 12A IGBT; G Series
• Manufacturer: IXYS

Specifications of IXGA12N120A3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 22
• Ic90, Tc=90°c, Igbt, (a): 12
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Rthjc, Max, Igbt, (°c/w): 1.25
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
24
20
16
12
24
20
16
12
8
4
0
8
4
0
0.0
0.0
5
0.5
0.5
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
6A
1.0
7
1.0
Fig. 5. Collector-to-Emitter Voltage
12A
1.5
vs. Gate-to-Emitter Voltage
8
2.0
1.5
I
V
C
9
GE
2.5
= 24A
V
V
2.0
V
CE
= 15V
GE
CE
V
13V
11V
10V
9V
GE
- Volts
3.0
10
- Volts
- Volts
= 15V
2.5
13V
11V
10V
9V
3.5
11
3.0
4.0
12
J
J
4.5
= 125ºC
= 25ºC
3.5
8V
7V
6V
5V
13
5.0
6V
5V
8V
7V
T
J
= 25ºC
4.0
14
5.5
6.0
4.5
15
1.8
1.6
1.4
1.2
1.0
0.8
0.6
35
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0
-50
3
0
Fig. 2. Extended Output Characteristics @ T
V
GE
IXGA12N120A3 IXGP12N120A3
-25
= 15V
5
4
Fig. 4. Dependence of V
0
Fig. 6. Input Admittance
10
Junction Temperature
5
T
J
25
- Degrees Centigrade
V
V
CE
15
GE
- Volts
50
6
- Volts
IXGH12N120A3
I
I
C
I
20
C
75
C
= 24A
= 12A
T
= 6A
CE(sat)
J
7
= - 40ºC
125ºC
25ºC
100
on
25
V
GE
J
= 15V
8
= 25ºC
13V
125
11V
10V
9V
30
8V
7V
6V
5V
150
9