IXGA12N120A3 IXYS, IXGA12N120A3 Datasheet - Page 4

• Manufacturer Part Number: IXGA12N120A3
• Description: IGBT Transistors 1200V, 12A IGBT; G Series
• Manufacturer: IXYS

Specifications of IXGA12N120A3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 22
• Ic90, Tc=90°c, Igbt, (a): 12
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3
• Rthjc, Max, Igbt, (°c/w): 1.25
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10.00
3.00
1.00
0.10
0.01
12
10
28
24
20
16
12
8
6
4
2
0
8
4
0
0.00001
200
0
T
R
dv / dt < 10V / ns
J
G
300
= 125ºC
= 10Ω
5
Fig. 9. Reverse-Bias Safe Operating Area
400
10
500
Fig. 7. Transconductance
15
T
600
I
J
C
V
= - 40ºC
CE
0.0001
- Amperes
- Volts
700
25ºC
20
125ºC
800
25
Fig. 11. Maximum Transient Thermal Impedance
900
Fig. 11. Maximum Transient Thermal Impedance
30
1000
0.001
35
1100
1200
40
Pulse Width - Second
aaaaaa
1,000
100
16
14
12
10
10
8
6
4
2
0
1
0
0
f
V
I
I
= 1 MHz
C
G
CE
2
0.01
= 12A
= 10mA
= 600V
5
IXGA12N120A3 IXGP12N120A3
4
10
6
Fig. 10. Capacitance
Fig. 8. Gate Charge
8
15
Q
G
- NanoCoulombs
V
10
CE
- Volts
20
12
0.1
IXGH12N120A3
25
14
16
30
C res
C ies
C oes
18
35
20
1
40
22