SUP60N06-12P-E3 Vishay, SUP60N06-12P-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP60N06-12P-E3
• Description: N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SUP60N06-12P-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 3250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69070.
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
0.01
0.1
1
10
Single Pulse
-4
0.2
Duty Cycle = 0.5
0.1
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
SUP60N06-12P
Vishay Siliconix
www.vishay.com
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