SUP60N06-12P Vishay, SUP60N06-12P Datasheet

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SUP60N06-12P

Manufacturer Part Number
SUP60N06-12P
Description
N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUP60N06-12P-E3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69070
S-83098-Rev. A, 29-Dec-08
Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
V
DS
60
(V)
0.012 at V
SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)
T O-220AB
R
Top View
G D S
DS(on)
a
GS
J
a
(Ω)
= 150 °C)
= 10 V
c
N-Channel 60-V (D-S) MOSFET
I
D
60
(A)
d
C
Q
= 25 °C, unless otherwise noted
g
(Typ.)
33
New Product
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Synchronous Rectifier
• Power Supplies
Available
Symbol
T
Symbol
R
J
R
V
V
E
g
I
I
P
, T
I
DM
AS
thJA
thJC
DS
GS
AS
D
D
Tested
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
Limit
D
S
100
Limit
± 20
SUP60N06-12P
3.25
1.25
60
54
60
80
40
80
40
d
d
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SUP60N06-12P Summary of contents

Page 1

... R (Ω) DS DS(on) 60 0.012 O-220AB Top View Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free) SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy ...

Page 2

... SUP60N06-12P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... 1.5 2.0 0 0.05 0.04 0.03 0.02 0.01 0. On-resistance vs. Gate-to-Source Voltage SUP60N06-12P Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics T = 125 ° ° Gate-to-Source Voltage (V) ...

Page 4

... SUP60N06-12P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Temperature (°C) J Drain-Source Breakdown vs. Junction Temperature www.vishay.com 4 New Product 100 10 1 0.1 0.01 0.001 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69070. Document Number: 69070 S-83098-Rev. A, 29-Dec-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUP60N06-12P Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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