SUP60N06-18-E3 Vishay, SUP60N06-18-E3 Datasheet

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SUP60N06-18-E3

Manufacturer Part Number
SUP60N06-18-E3
Description
MOSFET Power 60V 60A 120W
Manufacturer
Vishay
Datasheet

Specifications of SUP60N06-18-E3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
120000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP60N06-18-E3
Manufacturer:
FSC
Quantity:
5 000
Part Number:
SUP60N06-18-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70290
S–57253—Rev. D, 24-Feb-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Junction to Ambient
Junction-to-Ambient
Junction-to-Case
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
V
(BR)DSS
TO-220AB
SUP60N06-18
Top View
G D S
60
(V)
1%.
DRAIN connected to TAB
J
J
a
= 175 C)
= 175 C)
r
N-Channel 60-V (D-S), 175 C MOSFET
DS(on)
0.018
Parameter
Parameter
( )
T
C
= 25 C (TO-220AB and TO-263)
PCB Mount (TO-263)
Free Air (TO-220AB)
T
A
SUB60N06-18
= 25 C (TO-263)
Top View
G
T
TO-263
I
L = 0.1 mH
T
D
C
C
60
= 100 C
(A)
= 25 C
D
S
c
c
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
DS
GS
AR
hJA
D
D
D
D
stg
D
S
SUP/SUB60N06-18
www.vishay.com FaxBack 408-970-5600
–55 to 175
Vishay Siliconix
Limit
Limit
120
62.5
1.25
120
180
3.7
60
60
39
60
40
20
b
Unit
Unit
C/W
C/W
mJ
W
W
V
V
A
A
A
C
2-1

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SUP60N06-18-E3 Summary of contents

Page 1

... N-Channel 60-V (D-S), 175 C MOSFET V ( (BR)DSS DS(on) 60 0.018 TO-220AB DRAIN connected to TAB Top View SUP60N06-18 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175 C) = 175 Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Pulsed Current a Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current I RM(REC) Reverse Recovery Charge Notes: a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Test Condition 250 GS(th) V ...

Page 3

... S–57253—Rev. D, 24-Feb-98 100 0.020 25 C 0.016 125 C 0.012 0.008 0.004 iss SUP/SUB60N06-18 Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 I – Drain Current (A) D Gate Charge – Total Gate Charge (nC) g www.vishay.com FaxBack 408-970-5600 2-3 ...

Page 4

... T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 0.01 –5 – www.vishay.com FaxBack 408-970-5600 2-4 100 10 1 125 150 175 200 100 Limited by r DS(on 0.1 140 160 180 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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