2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 9

• Manufacturer Part Number: 2MBI150U4B-120-50
• Description: DUAL IGBT MODULE 150A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U4B-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 780W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

gories
cate-
Test
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Pull test)
( for gate )
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code C
Condition code B
Condition code B
Condition code A
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 102
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
MS5F6568
norms
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
a
failure
of
0
0
0
0
0
0
0
0
0
0
0
0
0
0
H04-004-03a
9
14
a