2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 12

• Manufacturer Part Number: 2MBI150U4B-120-50
• Description: DUAL IGBT MODULE 150A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U4B-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 780W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.000
0.100
0.010
0.001
400
300
200
100
0
0.001
0
Forward current vs. Forward on voltage (typ.)
Transient thermal resistance (max.)
Forward on voltage : VF [ V ]
1
Pulse width : Pw [ sec ]
0.010
Tj=25
chip
o
C
2
0.100
Tj=125
3
o
C
FWD
IGBT
1.000
4
1000
100
10
MS5F6568
0
Vcc=600V, VGE=±15V, RG=4.7Ω
Reverse recovery characteristics (typ.)
50
Forward current : IF [ A ]
100
150
Irr(125
trr(25
o
200
C)
o
C)
12
H04-004-03a
Irr(25
trr(125
250
14
o
C)
o
C)
300
a