2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 6

• Manufacturer Part Number: 2MBI150U4B-120-50
• Description: DUAL IGBT MODULE 150A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U4B-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 780W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11. List of material (材料リスト)
12. RoHS Directive Compliance(RoHS 指令適用について）
本IGBTモジュールは富士電機デバイステクノロジーが発行しているRoHSに関する資料MS5F6209を適用する。
日本語版(MS5F6212)は参考資料とする。
Module. The Japanese Edition(MS5F6212) is made into a reference grade.
The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT
No.
10 Silicone Gel
11 Adhesive
12 Solder
13
14
15 Label
16 Nut
17 Ring
1
2
3
4
5
6
7
8
9
Base Plate
Main terminal
Sub terminal
Cover
Case
Isolation substrate
IGBT chip
FWD chip
Wiring
Solder
Solder
(Between terminal
(Under Isolation substrate )
and Isolation substrate)
(Under chip)
Parts
Material (main)
Silicone resin
Silicone resin
Cu or Brass
Sn/Ag base
Sn/Ag base
Sn/Ag base
Al
PPS resin
PPS resin
Aluminum
2
Silicon
Silicon
Paper
Brass
O
Cu
Cu
Fe
3
+ Cu
(Total weight of soldering material(typ) : 6.2 g)
Ni plating
Ni plating
Ni plating
UL 94V-0
UL 94V-0
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
Trivalent Chromate treatment
MS5F6568
Ref.
H04-004-03a
6
14
a