GT30J324 Toshiba, GT30J324 Datasheet - Page 6

• Manufacturer Part Number: GT30J324
• Description: IGBT, 600V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT30J324

• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes

10
10
10
10
10
10
10
−1
−2
−3
−4
10
2
1
0
−5
10
−4
10
−3
Pulse width t
r
10
th
−2
(t) – t
FRD
10
w
w
−1
IGBT
(s)
10
0
Tc = 25°C
10
1
10
2
6
GT30J324
2002-04-19