GT30J324 Toshiba, GT30J324 Datasheet - Page 5

• Manufacturer Part Number: GT30J324
• Description: IGBT, 600V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT30J324

• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes

10000
3000
1000
300
100
100
0.3
0.1
30
10
60
50
40
30
20
10
30
10
0
3
1
0.1
0
1
Common collector
V GE = 0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
*: Single pulse
Curves must be
derated linearly
with increase in
temperature.
I C max (continuous)
I C max (pulsed)*
Tc = 25°C
0.3
Collector-emitter voltage V
0.6
DC operation
Collector-emitter voltage V
3
Tc = 125°C
1
Forward voltage V
Safe Operating Area
1.2
10
3
C – V
I
F
30
– V
10
1.8
CE
F
−40
30
F
100
2.4
CE
CE
(V)
25
100
100 µs*
1 ms*
10 ms*
(V)
(V)
300
3.0
300
C res
C oes
50 µs*
C ies
1000
1000
3.6
5
500
400
300
200
100
100
0.3
0.1
0.3
0.1
10
30
10
0
3
1
3
1
1
0
0
Common emitter
R L = 10 Ω
Tc = 25°C
t rr
I rr
T j ≤ 125°C
V GE = 15 V
R G = 24 Ω
3
Collector-emitter voltage V
5
40
300
V CE = 100 V
Forward current I
Gate charge Q
Reverse Bias SOA
10
10
V
200
CE
80
t
rr
, V
, I
30
rr
15
GE
– I
– Q
120
G
F
F
Common collector
di/dt = −100 A/µs
V GE = 0
100
G
20
(nC)
(A)
CE
: Tc = 25°C
: Tc = 125°C
160
300
(V)
25
GT30J324
2002-04-19
1000
200
30
1000
300
100
30
10
20
16
12
8
4
0