GT30J324 Toshiba, GT30J324 Datasheet - Page 4
GT30J324
Manufacturer Part Number
GT30J324
Description
IGBT, 600V, TO-3P(N)
Manufacturer
Toshiba
Datasheet
1.GT30J324.pdf
(7 pages)
Specifications of GT30J324
Transistor Type
IGBT
Dc Collector Current
30A
Collector Emitter Voltage Vces
2.45V
Power Dissipation Max
170W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Power Dissipation Pd
170W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT30J324
Manufacturer:
TOHSIBA
Quantity:
9 800
Part Number:
GT30J324
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
0.03
0.01
0.03
0.01
0.3
0.1
0.3
0.1
0.3
0.1
10
10
30
10
3
1
3
1
3
1
1
1
1
Common emitter
V CC = 300 V
V GG = 15 V
I C = 30 A
(Note 2)
Common emitter
V CC = 300 V
V GG = 15 V
I C = 30 A
(Note 1)
Common emitter
V CC = 300 V
V GG = 15 V
I C = 30 A
(Note 1)
Switching time t
Switching time t
3
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
3
: Tc = 25°C
: Tc = 125°C
3
t d (on)
Switching loss E
t d (off)
t off
E off
t on
t f
t r
Gate resistance R
Gate resistance R
Gate resistance R
10
10
10
30
30
30
on
off
, t
, t
on
r
f
, t
, t
, E
G
G
G
100
100
100
d (off)
d (on)
off
(Ω)
(Ω)
(Ω)
– R
E on
– R
– R
300
300
300
G
G
G
1000
1000
1000
4
0.03
0.01
0.03
0.01
0.03
0.01
0.3
0.3
0.1
0.3
0.1
0.1
10
1
3
1
3
1
3
0
0
0
t d (on)
t d (off)
E off
Common emitter
V CC = 300 V
V GG = 15 V
R G = 24 Ω
(Note 1)
t on
t off
t r
t f
Switching time t
Switching time t
: Tc = 25°C
: Tc = 125°C
5
5
5
Switching loss E
Collector current I
Collector current I
Collector current I
10
10
10
15
15
15
on
off
, t
, t
on
r
f
, t
, t
, E
C
C
C
Common emitter
V CC = 300 V
V GG = 15 V
R G = 24 Ω
(Note 2)
Common emitter
V CC = 300 V
V GG = 15 V
R G = 24 Ω
(Note 1)
E on
20
20
20
d (on)
d (off)
off
(A)
(A)
(A)
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
– I
– I
– I
C
25
25
25
C
C
GT30J324
2002-04-19
30
30
30