VRF141G MICROSEMI, VRF141G Datasheet - Page 3

• Manufacturer Part Number: VRF141G
• Description: RF FET, 80V
• Manufacturer: MICROSEMI

Specifications of VRF141G

• Drain Source Voltage Vds: 80V
• Continuous Drain Current Id: 40A
• Power Dissipation Pd: 500W
• No. Of Pins: 5
• Transistor Type: RF MOSFET

Typical Performance Curves
Bias 0-6V
Input
C1 - Arco 402, 1.5 ±20 pF
C2 - Arco 406, 15 ±115 pF
C3, C4, C8, C9, C10 - 1000 pF Chip
C5, C11 - 0.1 m F Chip
C6 - 330 pF Chip
C7 - 200 pF and 180 pF Chips in Parallel
C12 - 0.47 m F Ceramic Chip, Kemet 1215 or Equivalent
C13 - Arco 403, 3.0 ±35 pF
L1 - 10 T urns AWG #16 Enameled Wire,
L2 - Ferrite Beads of Suitable Material for
R1 - 100 Ohms, 1/2 W
R2 - 1.0 kOhm, 1/2 W
C2
R1
Close Wound, 1/4, I.D.
1.5±2.0 m H Total Inductance
C1
R2
C3
0.40
0.20
0.10
0.35
0.30
0.05
0.25
0.15
C4
0
10
C5
-5
T1
D = 0.9
0.7
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0.5
0.3
0.1
0.05
C6
DUT
10
-4
SINGLE PULSE
C7
Figure 7. 175 MHz T est Circuit
RECTANGULAR PULSE DURATION (seconds)
C10
T2
10
C11
-3
C8
T1 - 9:1 RF Transformer. Can be made of 15±18 Ohms
T2 - 1:9 RF T ransformer . Can be made of 15±18 Ohms
Board Material - 0.062
NOTE: For stability, the input transformer T1 must be loaded
Unless Otherwise Noted, All Chip Capacitors are ATC
L1
L2
C13
C9
Semirigid Co-ax, 62 ±90 Mils O.D.
Semirigid Co-ax, 70 ±90 Mils O.D.
Type 100B or Equivalent.
with ferrite toroids or beads to increase the common
mode inductance. For operation below 100 MHz. The
same is required for the output transformer.
See pictures for construction details.
1 oz. Copper Clad, 2 Sides, e
C12
10
Output
-2
28V
+
-
impedance
windings
,
High
Fiberglass (G10),
Center
Note:
tap
Peak T J = P DM x Z θJC + T C
Duty Factor D =
10
t
1
Center
= Pulse Duration
-1
Impedance
tap
t 1
ratio
r
4:1
= 5
t 2
t 1
/
t 2
Impedance
1.0
ratio
9:1
Connections to
low impedance
VRF141G
windings