VRF141G MICROSEMI, VRF141G Datasheet

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VRF141G

Manufacturer Part Number
VRF141G
Description
RF FET, 80V
Manufacturer
MICROSEMI
Datasheet

Specifications of VRF141G

Drain Source Voltage Vds
80V
Continuous Drain Current Id
40A
Power Dissipation Pd
500W
No. Of Pins
5
Transistor Type
RF MOSFET
Maximum Ratings
The VRF141G is designed for broadband commercial and military applications
at frequencies to 175MHz. The high power, high gain, and broadband perfor-
mance of this device make possible solid state transmitters for FM broadcast
or TV channel frequency bands.
Static Electrical Characteristics
Thermal Characteristics
FEATURES
• Improved Ruggedness V
• 300W with 14dB Typical Gain @ 175MHz, 28V
• Excellent Stability & Low IMD
• Common Source Confi guration
• RoHS Compliant
Symbol
Symbol
Symbol
V
RF POWER VERTICAL MOSFET
V
V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
R
(BR)DSS
I
V
T
DS(ON)
I
GS(TH)
V
DSS
GSS
g
P
T
I
θ JC
STG
DSS
fs
D
GS
D
J
Parameter
Drain-Source Breakdown Voltage (V
On State Drain Voltage (I
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Characteristic
Junction to Case Thermal Resistance
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device dissipation @ T
Storage Temperature Range
Operating Junction Temperature
(BR)DSS
= 80V
D(ON)
DS
Microsemi Website - http://www.microsemi.com
= 10V, I
C
= 10A, V
DS
= 25°C
C
= 10V, I
= 25°C
DS
DS
= ±20V, V
GS
D
= 60V, V
GS
= 100mA)
= 0V, I
D
= 10V)
• 5:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF141G
= 5A)
D
DS
GS
= 100mA)
= 0V)
= 0V)
All Ratings: T
C
=25°C unless otherwise specifi ed
Min
Min
5.0
2.9
80
VRF141G
-65 to 150
Typ
±40
500
200
Typ
90
3.6
80
40
.9
28V, 300W, 175MHz
VRF141G
Max
Max
0.35
1.0
1.0
1.0
4.4
mhos
°C/W
Unit
Unit
Unit
mA
μA
°C
W
V
V
V
V
A

Related parts for VRF141G

VRF141G Summary of contents

Page 1

... RF POWER VERTICAL MOSFET The VRF141G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband perfor- mance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES • Improved Ruggedness V = 80V (BR)DSS • ...

Page 2

... Min Typ Max Degradation in Output Power 250μs PULSE TEST<0.5 % DUTY CYCLE T = -55° 25° 125° DRAIN-TO-SOURCE VOLTAGE (V) GS FIGURE 2, Transfer Characteristics I DMax PD Max R ds(on 125° 75° 100 V , DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 4, Forward Safe Operating Area VRF141G Unit pF Unit dB % ...

Page 3

... Unless Otherwise Noted, All Chip Capacitors are ATC Type 100B or Equivalent. Figure 7. 175 MHz T est Circuit Note Pulse Duration Duty Factor Peak θ 1 9:1 High 28V Impedance impedance Center - ratio windings tap Output Center tap 4:1 Impedance ratio , Fiberglass (G10 VRF141G Connections to low impedance windings ...

Page 4

... PL .225 .005 .860 1.340 .210 VRF141G HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area ...

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