VRF141G MICROSEMI, VRF141G Datasheet - Page 2

• Manufacturer Part Number: VRF141G
• Description: RF FET, 80V
• Manufacturer: MICROSEMI

Specifications of VRF141G

• Drain Source Voltage Vds: 80V
• Continuous Drain Current Id: 40A
• Power Dissipation Pd: 500W
• No. Of Pins: 5
• Transistor Type: RF MOSFET

1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Dynamic Characteristics
Functional Characteristics
Typical Performance Curves
Symbol
Symbol
C
C
C
G
η
ψ
oss
ISS
rss
PS
D
10,000
1,000
100
60
50
40
30
20
10
10
0
V
V
0
DS
FIGURE 3, Capacitance vs Drain-to-Source Voltage
0
DS(ON
, DRAIN-TO-SOURCE VOLTAGE (V)
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
f = 175MHz,- V
f = 175MHz, V
f = 175MHz, V
FIGURE 1, Output Characteristics
10
)
, DRAIN-TO-SOURCE VOLTAGE (V)
5
20
10
DD
DD
DD
30
= 28V, I
= 28V, I
= 28V, I
15
40
DQ
DQ
V
14V
DQ
GS
10V
= 500mA, P
= 500mA, P
= 500mA, P
= 4V
9V
8V
20
50
7V
6V
5V
C
C
C
rss
iss
oss
60
25
out
out
out
= 300W
= 300W 5:1VSWR - All Phase Angles
= 300W
Test Conditions
V
f = 1MHz
V
DS
GS
= 28V
= 0V
100
10
25
20
15
10
5
0
1
1
0
T
T
FIGURE 4, Forward Safe Operating Area
TEST<0.5 % DUTY
J
V
V
C
I
250μs PULSE
DMax
=
GS
FIGURE 2, Transfer Characteristics
DS
=
125°C
CYCLE
T
75°C
2
, DRAIN-TO-SOURCE VOLTAGE (V)
, DRAIN-TO-SOURCE VOLTAGE (V)
T
J
= -55°C
J
= 25°C
R ds(on)
4
Min
Min
12
45
No Degradation in Output Power
10
6
PD Max
T
Typ
400
375
8
Typ
50
J
14
55
= 125°C
10
Max
Max
100
12
VRF141G
Unit
Unit
pF
dB
%