STM32F103ZGH6 STMicroelectronics, STM32F103ZGH6 Datasheet - Page 83

• Manufacturer Part Number: STM32F103ZGH6
• Description: MCU 32BIT 1MB FLASH 144LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F103ZGH6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, MMC, SPI, UART/USART, USB
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 96K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 21x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Processor Series: STM32F101xG
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 80 KB
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 36 MHz
• Number Of Programmable I/os: 112
• Number Of Timers: 15
• Operating Supply Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Operating Temperature Range: - 40 C to + 105 C
• Processor To Be Evaluated: STM32F103ZG
• Supply Current (max): 28 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-11115

STM32F103xF, STM32F103xG
5.3.12
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 42.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 43.
1. Based on characterization results, not tested in production.
V
V
Symbol Parameter
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
Peak level
EMI characteristics
ESD absolute maximum ratings
Ratings
V
LQFP144 package
compliant with IEC
61967-2
DD
3.3 V, T
Conditions
Doc ID 16554 Rev 2
A
25 °C,
T
to JESD22-A114
T
to JESD22-C101
A
A
+25 °C, conforming
+25 °C, conforming
Conditions
0.1 to 30 MHz
30 to 130 MHz
130 MHz to 1GHz
SAE EMI Level
frequency band
Monitored
2
II
Class Maximum value
Max vs. [f
8/48 MHz 8/72 MHz
Electrical characteristics
31
28
8
4
HSE
2000
500
/f
12
21
33
HCLK
4
]
(1)
dBµV
83/120
Unit
Unit
-
V