STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet - Page 7

• Manufacturer Part Number: STB120N4LF6
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STB120N4LF6

• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 110W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11096-2

STB120N4LF6, STD120N4LF6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
V
(V)
1.0
0.6
1.2
0.8
0.2
V
0.4
0.7
0.6
0.5
GS
0.8
0.4
10
0.9
12
1.0
(V)
SD
0
6
4
2
-75
8
0
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
-25
20
20
T
25
J
V
40
=175°C
I
DD
D
40
=80A
=20V
I
75
D
=250µA
60
T
J
60
=-55°C
125
T
80
J
=25°C
175
80
Doc ID 16919 Rev 2
AM08969v1
AM08971v1
AM08973v1
Q
T
g
J
I
(nC)
SD
(°C)
(A)
Figure 11. Normalized on resistance vs
R
1000
DS(on)
100
(norm)
(pF)
2.0
1.5
1.0
0.5
C
-75
0
0.1
Capacitance variations
temperature
-25
1
25
V
I
D
GS
Electrical characteristics
=40A
=10V
75
10
125
175
AM08970v1
AM08972v1
V
DS
Ciss
Coss
T
Crss
J
(V)
(°C)
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