STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet - Page 3

• Manufacturer Part Number: STB120N4LF6
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STB120N4LF6

• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 110W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11096-2

STB120N4LF6, STD120N4LF6
1
Electrical ratings
Table 2.
1. Limited by wire bonding
2. Pulse width limited by safe operating area
Table 3.
1. When mounted on 1 inch
Table 4.
1. Starting Tj = 25 °C, I
Symbol
Symbol
R
Symbol
R
E
I
thj-case
P
DM
I
thj-pcb
AS
V
V
T
D
I
AV
I
TOT
T
DS
GS
stg
D
(1)
j
(1)
(2)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Not-repetitive avalanche current
Single pulse avalanche energy
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Avalanche data
D
= 40 A, V
2
2 oz. Cu board.
DD
Parameter
Parameter
Parameter
C
Doc ID 16919 Rev 2
= 25 V
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
(1)
DPAK
50
-55 to 175
Value
Value
Value
± 20
1.36
394
320
110
40
80
80
40
D²PAK
Electrical ratings
35
°C/W
°C/W
Unit
Unit
Unit
mJ
°C
W
V
V
A
A
A
A
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