STB120N4LF6 STMicroelectronics, STB120N4LF6 Datasheet - Page 12

• Manufacturer Part Number: STB120N4LF6
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STB120N4LF6

• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 110W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11096-2

Package mechanical data
12/18
Table 10.
Dim.
A1
A2
D1
E1
V2
b4
e1
L1
L2
L4
c2
A
D
E
H
R
b
c
e
L
DPAK (TO-252) mechanical data
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0°
1
Doc ID 16919 Rev 2
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
mm
STB120N4LF6, STD120N4LF6
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8°
1