AUIRFR120Z International Rectifier, AUIRFR120Z Datasheet - Page 9

• Manufacturer Part Number: AUIRFR120Z
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR120Z

• Input Capacitance (ciss) @ Vds: 310nC @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.15ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 35W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 35 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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D.U.T
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Fig 17.
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-
SD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
„
HEXFET
t
d(on)
+
t
r
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
for N-Channel
Ripple
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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