AUIRFR120Z International Rectifier, AUIRFR120Z Datasheet - Page 8

• Manufacturer Part Number: AUIRFR120Z
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR120Z

• Input Capacitance (ciss) @ Vds: 310nC @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.15ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 35W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 35 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
0.01
0.1
10
1.0E-06
1
20
16
12
8
4
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
Vs. Temperature
0.01
0.05
0.10
75
TOP
BOTTOM 1% Duty Cycle
I D = 5.2A
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
1.0E-05
Single Pulse
125
150
175
tav (sec)
1.0E-04
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
Allowed avalanche Current vs
avalanche
assuming
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-03
= P
pulsewidth,
Tj = 25°C due to
D (ave)
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
www.irf.com
tav
thJC
jmax
1.0E-02
is