AUIRFR120Z International Rectifier, AUIRFR120Z Datasheet - Page 6

• Manufacturer Part Number: AUIRFR120Z
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR120Z

• Input Capacitance (ciss) @ Vds: 310nC @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.15ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 35W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 35 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.01
0.1
10
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
8
6
4
2
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
Case Temperature
0.10
0.05
0.02
0.01
50
T J , Junction Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
100
1E-005
125
t 1 , Rectangular Pulse Duration (sec)
150
175
0.0001
J
J
3.0
2.5
2.0
1.5
1.0
0.5
1
Ci= i Ri
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i Ri
R
I D = 5.2A
V GS = 10V
1
R
1
2
T J , Junction Temperature (°C)
R
2
Vs. Temperature
2
R
2
20 40 60 80 100 120 140 160 180
R
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
3
0.001
3
C
Ri (°C/W)
0.33747
1.793
2.150
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0.000125
0.000474
0.000053
i (sec)
0.01