IRFML8244TRPBF International Rectifier, IRFML8244TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFML8244TRPBF
• Description: MOSFET N-CH 25V 5.8A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFML8244TRPBF

• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 2.35V @ 10µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 41 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFML8244TRPBFTR

IRFML8244TRPbF
4
10000
100
0.1
1000
10
100
1
10
0.3
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance vs.
0.4
C rss
C oss
C iss
Drain-to-Source Voltage
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.5
T J = 150°C
0.6
0.7
f = 1 MHZ
10
0.8
T J = 25°C
V GS = 0V
0.9
1.0
1.1
100
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0.10
0
I D = 5.8A
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge vs.
1
V DS , Drain-to-Source Voltage (V)
V DS = 20V
V DS = 13V
V DS = 5.0V
Gate-to-Source Voltage
Q G , Total Gate Charge (nC)
2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1.0
10msec
3
1msec
4
100µsec
5
10
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6
7
100
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