IRFML8244TRPBF International Rectifier, IRFML8244TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFML8244TRPBF
• Description: MOSFET N-CH 25V 5.8A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFML8244TRPBF

• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 2.35V @ 10µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 41 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFML8244TRPBFTR

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100
100
0.1
0.1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
10
1
1
0.1
2.0
T J = 150°C
3.0V
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.5
1
3.0
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤60µs PULSE WIDTH
3.5
10
TOP
BOTTOM
4.0
VGS
15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
100
4.5
100
1.6
1.4
1.2
1.0
0.8
0.6
10
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
IRFML8244TRPbF
I D = 5.8A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
vs. Temperature
T J , Junction Temperature (°C)
3.0V
1
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.8V
3.5V
3.3V
3.0V
100
3