IRFML8244TRPBF International Rectifier, IRFML8244TRPBF Datasheet

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IRFML8244TRPBF

Manufacturer Part Number
IRFML8244TRPBF
Description
MOSFET N-CH 25V 5.8A SOT23
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFML8244TRPBF

Input Capacitance (ciss) @ Vds
430pF @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
2.35V @ 10µA
Gate Charge (qg) @ Vgs
5.4nC @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
41 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.8 A
Power Dissipation
1.25 W
Mounting Style
SMD/SMT
Gate Charge Qg
5.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFML8244TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFML8244TRPBF
Manufacturer:
MOLEX
Quantity:
32 000
Part Number:
IRFML8244TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFML8244TRPBF
0
Company:
Part Number:
IRFML8244TRPBF
Quantity:
81 000
Company:
Part Number:
IRFML8244TRPBF
Quantity:
990
www.irf.com
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Application(s)
• Load/ System Switch
Features and Benefits
Features
Low R
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
V
I
I
I
P
P
V
T
R
R
Notes  through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J,
DS
D
D
GS
θJA
θJA
@ T
@ T
T
@T
@T
(@V
STG
(@V
R
R
Symbol
Symbol
A
A
A
A
DS(on)
V
DS(on) max
DS(on) max
= 25°C
= 70°C
= 25°C
= 70°C
GS
GS Max
GS
V
DS
( ≤ 24mΩ)
= 4.5V)
= 10V)
are on page 10
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient (t<10s)
± 20
25
24
41
Parameter
Parameter
mΩ
mΩ
V
V
GS
GS
f
@ 10V
@ 10V
*
6
IRFML8244TRPbF


results in Easier manufacturing
Typ.
–––
–––
HEXFET Power MOSFET
-55 to + 150

Max.
1.25
0.80
0.01
± 20
5.8
4.6
25
24
Lower switching losses
Multi-vendor compatibility
Environmentally friendly
Increased reliability
Benefits
Micro3
IRFML8244TRPbF
Max.
100
99
TM
(SOT-23)
PD - 97587
Units
Units
W/°C
°C/W
°C
W
11/10/10
V
A
V
1

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IRFML8244TRPBF Summary of contents

Page 1

... IRFML8244TRPbF mΩ mΩ results in Easier manufacturing Parameter @ 10V GS @ 10V GS Parameter Typ 97587 HEXFET Power MOSFET  TM Micro3 (SOT-23) IRFML8244TRPbF Benefits Lower switching losses Multi-vendor compatibility Environmentally friendly ⇒ Increased reliability Max. Units V 25 5.8 4 1.25 W 0.80 0.01 W/°C ± - 150 °C Max. ...

Page 2

... IRFML8244TRPbF Electric Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I DSS Drain-to-Source Leakage Current I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance G gfs Forward Transconductance ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° 15V ≤60µs PULSE WIDTH 0.1 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFML8244TRPbF 100 VGS TOP 15V 10V 4.5V 4.0V 3.8V 3.5V 3.3V BOTTOM 3. 100 0.1 Fig 2. Typical Output Characteristics 1 ...

Page 4

... IRFML8244TRPbF 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss 100 C rss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 150° 0.1 0.3 0.4 0.5 0.6 0.7 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14 5.8A 12.0 10.0 8.0 6 ...

Page 5

... SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com IRFML8244TRPbF R Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 Fig 10b. Switching Time Waveforms 0.0001 0.001 0. Rectangular Pulse Duration (sec) ...

Page 6

... IRFML8244TRPbF 125° 25° GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 5. Fig 13. Typical On-Resistance vs. Drain 12V V Fig 14b. Gate Charge Test Circuit Vgs = 4.5V Vgs = 10V Drain Current (A) Current Current Regulator Same Type as D.U.T. ...

Page 7

... 10µA 1 250µA 1.4 1.2 1.0 0.8 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage vs. Junction Temperature www.irf.com IRFML8244TRPbF 1000 800 600 400 200 0 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Typical Power vs. Time 7 ...

Page 8

... IRFML8244TRPbF 0.15 [0.006 Micro3 (SOT-23/TO-236AB) Part Marking Information 0.10 [0.004 0.20 [0.008 NOTES: Recommended Footprint 0.972 0.950 2.742 0.802 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. ...

Page 9

... TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com IRFML8244TRPbF 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 4.1 ( .161 ) 1.65 ( .065 ) 3.9 ( .154 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 1.1 ( .043 ) 3.9 ( .154 ) ...

Page 10

... IRFML8244TRPbF Orderable part number Package Type IRFML8244TRPbF Micro3 † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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