ZXMN6A25GTA Diodes Inc, ZXMN6A25GTA Datasheet - Page 7

• Manufacturer Part Number: ZXMN6A25GTA
• Description: MOSFET Power N-Chan 60V MOSFET (UMOS)
• Manufacturer: Diodes Inc

Specifications of ZXMN6A25GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package outline - SOT223
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches.
Issue 2 - November 2006
© Zetex Semiconductors plc 2006
DIM
A1
b2
A
D
b
C
0.02
0.66
2.90
0.23
6.30
Min
Millimeters
-
Max
1.80
0.10
0.84
3.10
0.33
6.70
0.0008
0.026
0.114
0.009
0.248
Min
-
Inches
0.071
0.004
0.033
0.122
0.013
0.264
Max
7
DIM
E1
e1
E
e
L
-
6.70
3.30
0.90
Min
Millimeters
-
2.30 BSC
4.60 BSC
Max
7.30
3.70
-
-
ZXMN6A25G
0.264
0.130
0.355
www.zetex.com
Min
0.0905 BSC
-
0.181 BSC
Inches
0.287
0.146
Max
-
-