ZXMN6A25GTA Diodes Inc, ZXMN6A25GTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A25GTA
• Description: MOSFET Power N-Chan 60V MOSFET (UMOS)
• Manufacturer: Diodes Inc

Specifications of ZXMN6A25GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
Issue 2 - November 2006
© Zetex Semiconductors plc 2006
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(c)
amb
amb
= 25°C
= 25°C
@ V
@ V
@ V
GS
GS
GS
(a)
(b)
(c)
= 10V; T
= 10V; T
= 10V; T
(b)
amb
amb
amb
2
= 25°C
= 70°C
= 25°C
10 sec.
(b)
(b)
(a)
Symbol
Symbol
T
V
R
R
V
j
I
I
, T
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
JA
JA
stg
ZXMN6A25G
-55 to +150
Limit
Limit
28.5
28.5
62.5
±20
6.7
5.4
4.8
5.7
3.9
60
16
31
32
2
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mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
°C
W
W
A
A
A
A
A
A
V
V