ZXMN6A25GTA Diodes Inc, ZXMN6A25GTA Datasheet

MOSFET Power N-Chan 60V MOSFET (UMOS)

ZXMN6A25GTA

Manufacturer Part Number
ZXMN6A25GTA
Description
MOSFET Power N-Chan 60V MOSFET (UMOS)
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN6A25GTA

Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.7 A
Power Dissipation
3900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ZXMN6A25G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A25
Issue 2 - November 2006
© Zetex Semiconductors plc 2006
Device
ZXMN6A25GTA
Low on-resistance
Fast switching speed
Low gate drive
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
V
(BR)DSS
60
0.070 @ V
0.050 @ V
Reel size
(inches)
R
DS(on)
7
GS
GS
( )
= 4.5V
= 10V
Tape width
(mm)
12
1
I
D
6.7
5.7
(A)
Quantity
per reel
1,000
D
Pinout - top view
www.zetex.com
G
S
D
D
G
S

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ZXMN6A25GTA Summary of contents

Page 1

... Low gate drive • SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A25GTA 7 Device marking ZXMN 6A25 Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 6 4.5V 5.7 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation 25°C amb Linear derating factor Power dissipation ...

Page 3

Typical characteristics Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25G 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25G 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Issue 2 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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