ZXMN3A06DN8TA Diodes Inc, ZXMN3A06DN8TA Datasheet - Page 5

• Manufacturer Part Number: ZXMN3A06DN8TA
• Description: MOSFET Power Dl 30V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN3A06DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 2 - OCTOBER 2002
0.01
0.01
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
Typical Transfer Characteristics
1
On-Resistance v Drain Current
T = 25°C
0.1
T = 150°C
V
V
DS
GS
Output Characteristics
2V
I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
2
10V
V
1
GS
1
2.5V
4V
T = 25°C
TYPICAL CHARACTERISTICS
V
3
DS
3V
T = 25°C
= 10V
10
10
4V
1.5V
2.5V
3V
2V
V
10V
GS
4
5
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
10
0.1
10
1
Normalised Curves v Temperature
-50
0.2
1
Source-Drain Diode Forward Voltage
T = 150°C
0.1
Tj Junction Temperature (°C)
V
V
0.4
DS
Output Characteristics
SD
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0
T = 150°C
0.6
ZXMN3A06DN8
10V
1
V
I
D
V
I
0.8
GS
50
D
= 250uA
GS
4V
= 1.5A
= V
= 10V
T = 25°C
DS
1.0
100
10
1.2
3.5V
R
V
2.5V
1.5V
DS(on)
1V
2V
GS(th)
3V
V
GS
150
1.4