ZXMN3A06DN8TA Diodes Inc, ZXMN3A06DN8TA Datasheet

MOSFET Power Dl 30V N-Chnl UMOS

ZXMN3A06DN8TA

Manufacturer Part Number
ZXMN3A06DN8TA
Description
MOSFET Power Dl 30V N-Chnl UMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXMN3A06DN8TA.pdf (7 pages)

Specifications of ZXMN3A06DN8TA

Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.2 A
Power Dissipation
2100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
ZXMN3A06DN8TA
Manufacturer:
D1ODES
Quantity:
20 000
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMN
3A06D
ISSUE 2 - OCTOBER 2002
DEVICE
ZXMN3A06DN8TA
ZXMN3A06DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
= 30V; R
DS(ON)
REEL
13’‘
7
= 0.035
’‘
WIDTH
12mm
12mm
TAPE
; I
D
= 6.2A
QUANTITY
PER REEL
2500 units
500 units
1
ZXMN3A06DN8
PINOUT
Top view
SO8

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ZXMN3A06DN8TA Summary of contents

Page 1

... Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMN3A06DN8TA 7 ’‘ 12mm ZXMN3A06DN8TC 13’‘ 12mm DEVICE MARKING ZXMN 3A06D ISSUE 2 - OCTOBER 2002 ; I = 6.2A D ...

Page 2

ZXMN3A06DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) ...

Page 3

ISSUE 2 - OCTOBER 2002 TYPICAL CHARACTERISTICS 3 ZXMN3A06DN8 ...

Page 4

ZXMN3A06DN8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer Characteristics 100 2V 10 ...

Page 6

ZXMN3A06DN8 1200 1000 800 C ISS C 600 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms TYPICAL CHARACTERISTICS ...

Page 7

PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex plc 2002 Zetex plc Zetex GmbH Fields New Road Streitfeldstraße 19 Chadderton D-81673 München Oldham, OL9 8NP United Kingdom Germany Telephone (44) 161 622 4422 Telefon: (49) 89 ...

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